VLB10-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI VLB10-12F
is Designed for
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
Ø.125 NOM.
FULL R
J
.125
FEATURES:
•
•
•
Omnigold™
Metalization System
MAXIMUM RATINGS
F
C
D
E
I
GH
I
C
V
CBO
V
CEO
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
2.0 A
36 V
18 V
36 V
4.0 V
20 W @ T
C
= 25 C
-65
O
C to +200
O
C
-65 C to +150 C
5.0 C/W
O
O
O
O
DIM
A
B
C
D
E
F
G
H
I
J
.240 / 6.10
.004 / 0.10
.085 / 2.16
.160 / 4.06
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10732
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
C
OB
P
G
η
C
I
C
= 15 mA
I
C
= 50 mA
T
C
= 25 C
O
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
18
36
4.0
1.0
UNITS
V
V
V
mA
---
pF
dB
I
E
= 2.5 mA
V
CB
= 12.5 V
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CC
= 12.5 V
P
OUT
= 10 W
I
C
= 250 mA
f = 1.0 MHz
f = 50 MHz
5.0
200
65
16
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
