VLB100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI VLB100-12
is Designed for
PACKAGE STYLE .500 4L FLG
.112x45°
A
FULL R
Ø.125 NOM.
L
FEATURES:
•
•
•
Omnigold™
Metalization System
C
B
E
D
G
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
F
K
H
20 A
36 V
18 V
4.0 V
270 W @ T
C
= 25 C
-65 C to +200 C
-65
O
C to +150
O
C
0.65
O
C/W
O
O
DIM
A
B
C
D
E
F
G
H
I
J
K
L
.980 / 24.89
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.245 / 6.22
.720 / 18.28
.125 / 3.18
MINIMUM
inches / mm
I J
MAXIMUM
inches / mm
.220 / 5.59
.125 / 3.18
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
ORDER CODE: ASI10740
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BVCEO
BV
EBO
I
CES
h
FE
C
OB
P
G
η
C
I
C
= 50 mA
T
C
= 25 C
O
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
E
= 10 mA
V
CE
= 12.5 V
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CC
= 12.5 V
P
OUT
= 100 W
I
C
= 5.0 A
f = 1.0 MHz
f = 50 MHz
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
15
20
---
400
7.0
60
UNITS
V
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
