AT28BV64
Features
•
•
•
•
•
•
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2.7V to 3.6V Supply
Full Read and Write Operation
Low Power Dissipation
8 mA Active Current
50
µA
CMOS Standby Current
Read Access Time - 300 ns
Byte Write - 3 ms
Direct Microprocessor Control
DATA Polling
READY/BUSY Open Drain Output
High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
JEDEC Approved Byte-Wide Pinout
Commercial and Industrial Temperature Ranges
64K (8K x 8)
Battery-Voltage
™
CMOS
E
2
PROM
Description
The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable
Read Only Memory specifically designed for battery powered applications. Its 64K of
memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced
nonvolatile CMOS technology, the device offers access times to 200 ns with power
dissipation less than 30 mW. When the device is deselected the standby current is
less than 50
µA.
The AT28BV64 is accessed like a Static RAM for the read or write cycles without the
need for external components. During a byte write, the address and data are latched
internally, freeing the microprocessor address and data bus for other operations. Fol-
(continued)
Pin Configurations
Pin Name
A0 - A12
CE
OE
WE
I/O0 - I/O7
RDY/BUSY
NC
DC
Function
Addresses
Chip Enable
PDIP, SOIC Top View
AT28BV64
Output Enable
Write Enable
Data Inputs/Outputs
Ready/Busy Output
No Connect
Don’t Connect
PLCC Top View
TSOP Top View
0493A
2-127
ATMEL [ ATMEL CORPORATION ]
