Features
•
Read Access Time - 200 ns
•
Automatic Page Write Operation
•
•
•
•
•
•
•
•
– Internal Address and Data Latches for 256 Bytes
– Internal Control Timer
Fast Write Cycle Time
– Page Write Cycle Time - 10 ms Maximum
– 1 to 256 Byte Page Write Operation
Low Power Dissipation
– 80 mA Active Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
– Endurance: 10,000 Cycles
– Data Retention: 10 Years
Single 5V
±
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
4-Megabit
(512K x 8)
Paged E
2
PROM
AT28C040
Description
The AT28C040 is a high-performance electrically erasable and programmable read
only memory (E
2
PROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device
offers access times to 200 ns with power dissipation of just 440 mW.
(continued)
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
SIDE BRAZE,
FLATPACK
Top View
LCC
Top View
AT28C040 4-
Megabit (512K x
8) Paged
E
2
PROM
Rev. 0542B–04/98
1
ATMEL [ ATMEL CORPORATION ]
