AT29LV010A
Features
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Single Supply Voltage, Range 3V to 3.6V
3-Volt-Only Read and Write Operation
Software Protected Programming
Fast Read Access Time - 150 ns
Low Power Dissipation
15 mA Active Current
20
µA
CMOS Standby Current
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (128 bytes/sector)
Internal Address and Data Latches for 128-Bytes
Two 8 KB Boot Blocks with Lockout
Fast Sector Program Cycle Time - 20 ms
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
1 Megabit
(128K x 8)
3-volt Only
CMOS Flash
Description
The AT29LV010A is a 3-volt-only in-system Flash programmable and erasable read
only memory (Flash). Its 1 megabit of memory is organized as 131,072 bytes by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 150 ns with power dissipation of just 54 mW over the commercial
temperature range. When the device is deselected, the CMOS standby current is less
than 20
µA.
The device endurance is such that any sector can typically be written to
in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29LV010A does not require
high input voltages for programming. Three-volt-only commands determine the opera-
tion of the device. Reading data out of the device is similar to reading from an
EPROM. Reprogramming the AT29LV010A is performed on a sector basis; 128-bytes
of data are loaded into the device and then simultaneously programmed.
AT29LV010A
(continued)
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
Function
Addresses
Chip Enable
Output Enable
Write Enable
PLCC Top View
I/O0 - I/O7 Data Inputs/Outputs
NC
No Connect
TSOP Top View
Type 1
0520B
4-53
ATMEL [ ATMEL CORPORATION ]
