Features
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Single Voltage Read/Write Operation: 2.65V to 3.6V
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Access Time – 70 ns
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Sector Erase Architecture
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– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time – 12 µs
Fast Sector Erase Time – 300 ms
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
Programming of Any Other Byte/Word
Low-power Operation
– 12 mA Active
– 13 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Write Protection
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Minimum 100,000 Erase Cycles
Common Flash Interface (CFI)
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16-megabit
(1M x 16/2M x 8)
3-volt Only
Flash Memory
AT49BV162A
AT49BV162AT
AT49BV163A
AT49BV163AT
Description
The AT49BV162A(T)/163A(T) is a 2.7-volt 16-megabit Flash memory organized as
1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 71 sectors for erase operations. The device is offered in a 48-lead TSOP and a
48-ball CBGA package. The device has CE and OE control signals to avoid any bus
contention. This device can be read or reprogrammed using a single power supply,
making it ideally suited for in-system programming.
Pin Configurations
Pin Name
A0 - A19
CE
OE
WE
RESET
RDY/BUSY
VPP
I/O0 - I/O14
I/O15 (A-1)
BYTE
NC
Note:
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
READY/BUSY Output
Write Protection
Data Inputs/Outputs
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
Selects Byte or Word Mode
No Connect
1. The V
PP
pin is not available for the AT49BV163A(T).
3349G–FLASH–7/04
1
ATMEL [ ATMEL CORPORATION ]
