Features
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Single Voltage Read/Write Operation: 2.65V to 3.6V
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Access Time – 70 ns
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Sector Erase Architecture
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– Fifteen 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Byte/Word Program Time – 12 µs
Fast Sector Erase Time – 300 ms
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
Programming of Any Other Byte/Word
Low-power Operation
– 12 mA Active
– 13 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Minimum 100,000 Erase Cycles
Common Flash Interface (CFI)
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8-megabit
(512K x 16/
1M x 8)
3-volt Only
Flash Memory
AT49BV802A
AT49BV802AT
Description
The AT49BV802A(T) is a 2.7-volt 8-megabit Flash memory organized as 524,288
words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on I/O0
- I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 23 sectors for
erase operations. The AT49BV802A(T) is offered in a 48-lead TSOP and a 48-ball
CBGA package. The device has CE and OE control signals to avoid any bus conten-
tion. This device can be read or reprogrammed using a single power supply, making it
ideally suited for in-system programming.
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
RESET
RDY/BUSY
I/O0 - I/O14
I/O15 (A-1)
BYTE
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
READY/BUSY Output
Data Inputs/Outputs
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
Selects Byte or Word Mode
No Connect
Rev. 3405C–FLASH–9/04
1
ATMEL [ ATMEL CORPORATION ]
