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AT49F040A-70JI 参数 Datasheet PDF下载

AT49F040A-70JI图片预览
型号: AT49F040A-70JI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8 ), 5伏只有闪存 [4-megabit (512K x 8) 5-volt Only Flash Memory]
分类和应用: 闪存
文件页数/大小: 16 页 / 264 K
品牌: ATMEL [ ATMEL CORPORATION ]
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Features
Single-voltage Operation
– 5V Read
– 5V Reprogramming
Fast Read Access Time – 55 ns
Internal Program Control and Timer
Sector Architecture
– One 16K Bytes Boot Block with Programming Lockout
– Two 8K Bytes Parameter Blocks
– Eight Main Memory Blocks (One 32K Bytes, Seven 64K Bytes)
Fast Erase Cycle Time – 6 Seconds
Byte-by-Byte Programming – 20 µs/Byte Typical
Hardware Data Protection
DATA Polling for End of Program Detection
Low Power Dissipation
– 20 mA Active Current
– 70 µA CMOS Standby Current
Typical 10,000 Write Cycles
4-megabit
(512K x 8)
5-volt Only
Flash Memory
AT49F040A
Description
The AT49F040A is a 5-volt only in-system reprogrammable Flash memory. Its
4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to
55 ns with power dissipation of just 110 mW over the commercial temperature range.
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
I/O0 - I/O7
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
TSOP Top View (8 x 20 mm)
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
PLCC Top View
A12
A15
A16
A18
VCC
WE
A17
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
14
15
16
17
18
19
20
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
5
6
7
8
9
10
11
12
13
4
3
2
1
32
31
30
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
3359B–FLASH–10/04
1