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SBT2907AU 参数 Datasheet PDF下载

SBT2907AU图片预览
型号: SBT2907AU
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP Silicon Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 192 K
品牌: AUK [ AUK CORP ]
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SBT2907AU  
Absolute maximum ratings  
Characteristic  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-base voltage  
Ta=25°C  
Unit  
V
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
-60  
-60  
V
-5  
V
Collector current  
-600  
350  
mA  
mW  
°C  
*
Collector dissipation  
PC  
Junction temperature  
Tj  
150  
Storage temperature range  
* : Package mounted on 99.5% alumina 10×8×0.6mm  
Tstg  
-55~150  
°C  
Electrical Characteristics  
Ta=25°C  
Characteristic  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Test Condition  
Min. Typ. Max. Unit  
Collector-Base breakdown voltage  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
Collector cut-off current  
IC=-10µA, IE=0  
-60  
-60  
-5  
-
-
-
-
-
-
-
V
IC=-1mA, IB=0  
-
V
IE=-10µA, IC=0  
-
V
VCB=-60V, IE=0  
-
-20  
-
nA  
-
DC current gain  
hFE  
VCE=-10V, IC=-10mA  
IC=-150mA, IB=-15mA  
100  
-
Collector-Emitter saturation voltage  
VCE(sat)  
-0.4  
V
VCE=-5.0V, IC=-20mA,  
f=100MHz  
Transition frequency  
fT  
200  
-
-
MHz  
Collector output capacitance  
Turn-on time  
Delay time  
Cob  
ton  
td  
VCB=-10V, IE=0, f=1MHz  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
45  
10  
40  
100  
80  
30  
pF  
ns  
ns  
ns  
ns  
ns  
ns  
VCC=-30Vdc,IC=-150mAdc,  
IB1=-15mAdc  
Rise time  
tr  
Turn-off time  
Storage time  
Fall time  
toff  
ts  
VCC=-6.0Vdc,IC=-150mAdc,  
IB1=IB2=-15mAdc  
tf  
KST-3017-004  
2