Semiconductor
SBT5551F
NPN Silicon Transistor
Descriptions
•
General purpose amplifier
•
High voltage application
Features
•
high collector breakdown voltage : V
CBO
= 180V, V
CEO
= 160V
•
Low collector saturation voltage : V
CE(sat)
=0.5V(MAX.)
•
Complementary pair with SBT5401F
Ordering Information
Type NO.
SBT5551F
Marking
FNF
Package Code
SOT-23F
Outline Dimensions
unit :
mm
2.4±0.1
1.6±0.1
1
2.9±0.1
1.90 BSC
3
0.4±0.05
0.9±0.1
2
0.15±0.05
PIN Connections
1. Base
2. Emitter
3. Collector
0~0.1
KST-2097-000
1