Semiconductor
SBT5551
NPN Silicon Transistor
Descriptions
•
General purpose amplifier
•
High voltage application
Features
•
high collector breakdown voltage : V
CBO
= 180V, V
CEO
= 160V
•
Low collector saturation voltage : V
CE(sat)
=0.5V(MAX.)
•
Complementary pair with SBT5401
Ordering Information
Type NO.
SBT5551
Marking
FNF
Package Code
SOT-23
Outline Dimensions
unit :
mm
2.4±0.1
1.30±0.1
1
1.90 Typ.
3
2
0.4 Typ.
0.45~0.60
0.2 Min.
1.12 Max.
2.9±0.1
KST-2012-000
0.124
PIN Connections
1. Base
2. Emitter
3. Collector
0.38
0~0.1
-0.03
+0.05
1