Semiconductor
STD123N
Epitaxial planar NPN silicon transistor
Description
•
High current application
Features
•
•
•
•
Extremely low collector saturation voltage: V
CE(sat)
=0.1V(Typ.) @ I
C
=500mA, I
B
=50mA
Suitable for low voltage large current drivers
High DC current gain and large current capability
Low on resistance : R
ON
=0.6Ω(Max.) @ I
B
=1mA
Ordering Information
Type NO.
STD123N
Marking
STD123
Package Code
TO-92N
Outline Dimensions
unit :
mm
4.20~4.40
4.20~4.40
2.25 Max.
0.52 Max.
13.50~14.50
0.90 Max.
1.27 Typ.
2.14 Typ.
1 2 3
3.55 Typ
3.09~3.29
0.40 Max.
PIN Connections
1. Emitter
2. Base
3. Collector
KSD-T0C004-001
1