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STD13003 参数 Datasheet PDF下载

STD13003图片预览
型号: STD13003
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅功率晶体管 [NPN Silicon Power Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 271 K
品牌: AUK [ AUK CORP ]
 浏览型号STD13003的Datasheet PDF文件第1页浏览型号STD13003的Datasheet PDF文件第3页  
STD13003
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total Power dissipation (Ta=25℃)
Junction temperature
Storage temperature
(Tc=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Ratings
700
400
9
1.5
3
0.75
1.2
150
-55~150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Characteristic
Collector-Emitter sustaining voltage
Emitter cut-off current
DC Current gain
(Tc=25℃)
Symbol
V
CE(sus)
I
EBO
h
FE
*
Test Condition
I
C
=5mA, I
B
=0
V
EB
=9V, I
C
=0
I
C
=0.5A, V
CE
=2V
I
C
=1A, V
CE
=2V
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1.5A, I
B
=0.5A
Min. Typ. Max.
400
-
8
5
-
-
-
-
-
4
-
-
-
-
-
-
-
-
-
-
-
-
21
-
-
-
-
10
40
-
0.5
1
3
1
1.2
-
-
1.1
4
0.7
Unit
V
uA
Collector-Emitter saturation voltage
V
CE(sat)
*
V
Base-Emitter saturation voltage
Transition frequency
Output capacitance
Turn on Time
Storage Time
Fall Time
V
BE(sat)
*
f
T
C
ob
t
on
t
stg
t
f
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
V
CB
=10V, I
C
=0.1A, f=1MHz
V
CB
=10V, I
E
=0, f=0.1MHz
V
CC
=125V,I
C
=1A
I
B1
=-I
B2
=0.2A
V
MHz
pF
-
-
* Pulse test: PW≤300
㎲,
Duty cycle≤2% Pulse
KST-B019-000
2