STK0460F
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate-threshold voltage
Drain-source leakage current
Gate-source leakage
Drain-Source on-resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
④
④
(Tc=25°C)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250µA, V
GS
=0
I
D
=250µA, V
DS
= V
GS
V
DS
=600V, V
GS
=0V
V
DS
=0V, V
GS
=±30V
V
GS
=10V, I
D
=2.0A
V
DS
=10V, I
D
=2.0A
V
GS
=0V, V
DS
=25V, f=1MHz
Min.
600
2.0
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
1.9
3.0
520
35
7.5
10
42
38
46
16
2.8
5.5
Max.
-
4.0
1
±100
2.5
-
780
53
12
-
-
-
-
24
4.2
8.3
Unit
V
V
µA
nA
Ω
S
pF
V
DD
=300V, I
D
=4A
R
G
=25Ω
-
③
④
-
-
ns
V
DS
=300V, V
GS
=10V
I
D
=4A
-
-
③
④
-
nC
Source-Drain Diode Ratings and Characteristics
Characteristic
Continuous source current
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
①
④
(Tc=25°C)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=4A
I
s
=4A
di
s
/dt=100A/us
Min
-
-
-
-
-
Typ
-
-
-
310
2.26
Max
4
16
1.4
-
-
Unit
A
V
ns
uC
Note ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
L=17mH, I
AS
=4A, V
DD
=50V, R
G
=27Ω
③
Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④
Essentially independent of operating temperature
KSD-T0O005-000
3
AUK [ AUK CORP ]
