Semiconductor
TBN4226 Series
Si NPN Transistor
SOT-323
Unit in mm
2.1±0.1
1.25±0.05
□
Applications
- VHF and UHF low noise amplifier
- Wide band amplifier
2.0±0.2
1.30±0.1
1
3
2
0.30±0.1
0.1 Min.
□
Features
- High gain bandwidth product
f
T
= 6 GHz at V
CE
= 3 V, I
C
= 7 mA
f
T
= 8 GHz at V
CE
= 3 V, I
C
= 30 mA
- High power gain
- Low noise figure
NF = 1.2 dB at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
|S
21
|
2
= 9.0 dB at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
0.90±0.1
Pin Configuration
1. Base
2. Emitter
3. Collector
□
Absolute Maximum Ratings
(T
A
= 25
℃)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
P
tot
T
j
T
stg
Ratings
20
8
3
100
150
150
-65 ~ 150
Unit
V
V
V
mA
mW
℃
℃
Caution
:
Electro Static Discharge
sensitive device
0~0.1
0.15±0.05
1
AUK [ AUK CORP ]
