Semiconductor
THN420Z
SiGe NPN Transistor
SOT-343
Unit in mm
□
Applications
- Low noise amplifier, oscillator and buffer amplifier up to 3 GHz
1
3
□
Features
- High gain bandwidth product
f
T
= 17 GHz at V
CE
= 2 V, I
C
= 15 mA
f
T
= 20 GHz at V
CE
= 3 V, I
C
= 30 mA
- High power gain
|S
21
|
2
= 16 dB at V
CE
= 2 V, I
C
= 15 mA, f = 1.5 GHz
- Low noise figure
NF = 1.1 dB at V
CE
= 2 V, I
C
= 5 mA, f = 1.8 GHz
2
4
Pin Configuration
1. Base
2. Emitter
3. Emitter
4. Collector
□
Absolute Maximum Ratings
(T
A
= 25
℃)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Symbol
BV
CBO
BV
CEO
BV
EBO
I
C
P
tot
T
j
T
stg
Ratings
10
4.5
1.5
35
160
150
-65 ~ 150
Unit
V
V
V
mA
mW
℃
℃
Caution
:
Electro Static Discharge
sensitive device
1
AUK [ AUK CORP ]
