THN4301 Series
Semiconductor
SiGe NPN Transistor
□
Application
LNA and wide band amplifier up to GHz range
SOT-523
Unit in mm
□
Features
o Low Noise Figure
NF = 1.5dB at f = 2 GHz, V
CE
= 3 V, I
C
= 5 mA
NF = 1.7dB at f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
o High Gain
MAG = 12.3 dB at f = 2 GHz, V
CE
= 3 V, I
C
= 25 mA
MAG = 12.0 dB at f = 2 GHz, V
CE
= 1 V, I
C
= 5 mA
o High Transition Frequency
f
T
= 15 GHz at f = 2 GHz, V
CE
= 3 V, I
C
= 25 mA
Pin Configuration
Pin No
1
2
3
Symbol
B
E
C
Description
Base
Emitter
Collector
Unit : mm
Dimension
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
□
h
FE
Classification
Marking
h
FE
AH1
AH2
125 to 300 80 to 160
□
Available Package
Product
THN4301U
THN4301Z
THN4301E
Package
SOT-323
SOT-343
SOT-523
□
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
STG
T
J
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ratings
15
6
2.5
65
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
℃
℃
1
AUK [ AUK CORP ]
