THN6201 Series
Semiconductor
SiGe NPN Transistor
SOT-523
Unit in mm
□
Applications
LNA and wide band amplifier up to GHz range
□
Features
o Low Noise Figure
NF = 1.1 dB at f = 1 GHz, V
CE
= 3 V, I
C
= 5 mA
NF = 1.5 dB at f = 2 GHz, V
CE
= 3 V, I
C
= 5 mA
o High Power Gain
MAG = 18.5 dB at f = 1 GHz, V
CE
= 3 V, I
C
= 15 mA
MAG = 13 dB at f = 1 GHz, V
CE
= 3 V, I
C
= 15 mA
o High Transition Frequency
f
T
= 12 GHz at V
CE
= 3 V, I
C
= 15 mA
Pin Configuration
Pin No
1
2
3
Symbol
B
E
C
Description
Base
Emitter
Collector
□
h
FE
Classification
Marking
AC1
AC2
80 to 160
h
FE
Value 125 to 300
□
Available Package
Product
THN6201S
THN6201U
THN6201Z
THN6201E
Package
SOT-23
SOT-323
SOT-343
SOT-523
Unit : mm
Dimension
2.9ⅹ1.3, 1.2t
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
□
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
STG
T
J
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
THN6201KF SOT-623F 1.4ⅹ0.8, 0.6t
Ratings
20
12
2.5
35
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
℃
℃
Caution : ESD sensitive device
1
AUK [ AUK CORP ]
