Semiconductor
THN6501 Series
SiGe NPN Transistor
SOT-523
Unit in mm
□
Application
LNA and wide band amplifier up to GHz range
□
Features
o Low Noise Figure
NF = 1.0 dB at f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
o High Power Gain
MAG = 15 dB at f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
o High Transition Frequency
f
T
= 9 GHz at V
CE
= 3 V, I
C
= 30 mA
Pin Configuration
Pin No
1
2
3
Symbol
B
E
C
Description
Base
Emitter
Collector
Unit : mm
Dimension
2.9ⅹ1.3, 1.2t
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
□
h
FE
Classification
Marking
h
FE
AB1
AB2
125 to 300 80 to 160
□
Available Package
Product
THN6501S
THN6501U
THN6501Z
THN6501E
Package
SOT-23
SOT-323
SOT-343
SOT-523
□
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ratings
20
12
2.5
100
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
℃
℃
Caution : Electro Static Senetive Device
1
AUK [ AUK CORP ]
