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AS5C4008ECJ-25L 参数 Datasheet PDF下载

AS5C4008ECJ-25L图片预览
型号: AS5C4008ECJ-25L
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8 SRAM SRAM存储器阵列 [512K x 8 SRAM SRAM MEMORY ARRAY]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 17 页 / 113 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SRAM
Austin Semiconductor, Inc.
AC TEST CONDITIONS
Input pulse levels ................................................... Vss to 3.0V
Input rise and fall times ....................................................... 3ns
Input timing reference levels ............................................ 1.5V
Output reference levels ..................................................... 1.5V
Output load ............................................... See Figures 1 and 2
AS5C4008
Q
167 ohms
1.73V
C=30pF
Q
167 ohms
1.73V
C=5pF
Fig. 1 Output Load Equivalent
Fig. 2 Output Load Equivalent
NOTES
1.
2.
3.
4.
5.
6.
All voltages referenced to V
SS
(GND).
-2V for pulse width < 20ns
I
CC
is dependent on output loading and cycle rates.
This parameter is guaranteed but not tested.
Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
t
LZCE,
t
LZWE,
t
LZOE,
t
HZCE,
t
HZOE and
t
HZWE
are specified with CL = 5pF as in Fig. 2. Transition is
measured ±200mV from steady state voltage.
At any given temperature and voltage condition,
t
HZCE is less than
t
LZCE, and
t
HZWE is less than
t
LZWE.
WE\ is HIGH for READ cycle.
9.
10.
11.
12.
13.
14.
15.
7.
Device is continuously selected. Chip enables and
output enables are held in their active state.
Address valid prior to, or coincident with, latest
occurring chip enable.
t
RC = Read Cycle Time.
Chip enable and write enable can initiate and
terminate a WRITE cycle.
Output enable (OE\) is inactive (HIGH).
Output enable (OE\) is active (LOW).
ASI does not warrant functionality nor reliability of any
product in which the junction temperature exceeds
150°C. Care should be taken to limit power to acceptable
levels.
8.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION
V
CC
for Retention Data
Data Retention Current
(L Version Only)
Chip Deselect to Data
Retention Time
Operation Recovery Time
CONDITIONS
CE\ > (Vcc -0.2V)
VIN > (Vcc -0.2V) or < 0.2V
V
CC
= 2V
SYMBOL
V
DR
I
CCDR
t
CDR
t
R
0
10
MIN
2
4.5
MAX
UNITS
V
mA
ns
ms
4
4, 11
NOTES
AS5C4008
Rev. 6.2 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5