欢迎访问ic37.com |
会员登录 免费注册
发布采购

AS5C4009CW-70/H 参数 Datasheet PDF下载

AS5C4009CW-70/H图片预览
型号: AS5C4009CW-70/H
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8 SRAM超低功耗SRAM [512K x 8 SRAM Ultra Low Power SRAM]
分类和应用: 内存集成电路静态存储器
文件页数/大小: 12 页 / 103 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
 浏览型号AS5C4009CW-70/H的Datasheet PDF文件第2页浏览型号AS5C4009CW-70/H的Datasheet PDF文件第3页浏览型号AS5C4009CW-70/H的Datasheet PDF文件第4页浏览型号AS5C4009CW-70/H的Datasheet PDF文件第5页浏览型号AS5C4009CW-70/H的Datasheet PDF文件第6页浏览型号AS5C4009CW-70/H的Datasheet PDF文件第7页浏览型号AS5C4009CW-70/H的Datasheet PDF文件第8页浏览型号AS5C4009CW-70/H的Datasheet PDF文件第9页  
SRAM
Austin Semiconductor, Inc.
512K x 8 SRAM
Ultra Low Power SRAM
AVAILABLE AS MILITARY
SPECIFICATION
• SMD 5962-95613
• MIL STD-883
1
1,2
AS5C4009
PIN ASSIGNMENT
(Top View)
32-Pin DIP, 32-Pin SOJ
& 32-Pin TSOP
FEATURES
• Ultra Low Power with 2V Data Retention
(0.2mW MAX worst case Power-down standby)
• Fully Static, No Clocks
• Single +5V ±10% power supply
• Easy memory expansion with CE\ and OE\ options
• All inputs and outputs are TTL-compatible
• Three state outputs
• Operating temperature range:
Ceramic -55
o
C to +125
o
C & -40
o
C to +85
o
C
Plastic
-40
o
C to +85
o
C
3
1. Not applicable to plastic package
2. Applies to CW package only.
3. Contact factory for -55
o
C to +125
o
C
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/01
I/02
I/03
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
A17
WE\
A13
A8
A9
A11
OE\
A10
CE\
I/08
I/07
I/06
I/05
I/04
OPTIONS
MARKING
• Timing
55ns access
-55
4
70ns access
-70
85ns access
-85
100ns access
-100
• Packages
Ceramic Dip (600 mil)
CW
5
Ceramic SOJ
ECJ
Plastic TSOP
DG
Options
2V data retention/very low power L
No. 112
No. 502
No. 1002
GENERAL DESCRIPTION
The AS5C4009 is organized as 524,288 x 8 SRAM utilizing a
special ultra low power design process. ASI’s pinout adheres to the
JEDEC standard for pinout on 4 megabit SRAMs. The evolutionary 32
pin version allows for easy upgrades from the 1 meg SRAM design.
For flexibility in memory applications, ASI offers chip enable (CE\)
and output enable (OE\) capabilities. These features can place the
outputs in High-Z for additional flexibility in system design.
This devices operates from a single +5V power supply and all
inputs and outputs are fully TTL-compatible.
Writing to these devices is accomplished when write enable (WE\)
and CE\ inputs are both LOW. Reading is accomplished when WE\
remains HIGH and CE\ and OE\ go LOW. The device offers a re-
duced power standby mode when disabled, by lowering VCC to 2V and
maintaining CE\ = 2V. This allows system designers to meet ultra low
standby power requirements.
4. For DG package, contact factory
5. Contact Factory
NOTE:
Not all combinations of operating temperature, speed, data retention and low power are
necessarily available. Please contact the factory for availability of specific part number
combinations.
Pin Name
Function
WE\
Write Enable Input
CE\
Chip Select Input
OE\
Output Enable Input
A0 - A18 Address Inputs
I/O1 - I/O8 Data Inputs/Outputs
Vcc
Power
Vss
Ground
For more products and information
please visit our web site at
www.austinsemiconductor.com
AS5C4009
Rev. 5.1 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1