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AS8E512K8CW-250/XT 参数 Datasheet PDF下载

AS8E512K8CW-250/XT图片预览
型号: AS8E512K8CW-250/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8 EEPROM EEPROM模块 [512K x 8 EEPROM EEPROM Module]
分类和应用: 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 13 页 / 146 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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EEPROM
Austin Semiconductor, Inc.
AS8E512K8
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC READ OPERATING
CONDITIONS
(-55
o
C<T
A
<+125
o
C; Vcc = 5V +10%)
 
   



   



 





       





















   



      
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A.C. READ WAVEFORMS
(1,2,3,4)
ADDRESS
CE\
t
CE
t
OE
t
ACC
OUTPUT
V
ALID
ADDRESS VALID
OE\
t
DF
t
OH
OUTPUT
HIGH Z
NOTES:
1. CE\ may be delayed up to t
ACC
-t
CE
after the address transi-
tion without inpact on t
ACC
.
2. OE\ may be delayed up to t
CE
-t
OE
after the falling edge of
CE\ without inpact on t
CE
or by t
ACC
-t
OE
after an address
change without inpact on t
ACC
.
3. t
DF
is specified from OE\ or CE\ whichever occurs first
(C
L
= 5pF).
4. This parameter is characterized and is not 100% tested.
5. A17 and A18 must remain valid through the WE\ and CE\
low pulse.
INPUT TEST WAVEFORMS AND MEASUREMENT
LEVEL FOR AC TEST CONDITIONS
In p u t P u ls e L e v e ls
In p u t R is e a n d F a ll T im e s
In p u t a n d O u tp u t
T im in g R e fe re n c e L e v e ls
AS8E512K8
Rev. 3.1 6/05
OUTPUT TEST LOAD
5.0V
1.8K
1.3K
100pF
0 V to 3 .0 V
5nS
1 .5 V
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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