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AS8ERLC128K32QB-300/XT 参数 Datasheet PDF下载

AS8ERLC128K32QB-300/XT图片预览
型号: AS8ERLC128K32QB-300/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×32的耐辐射EEPROM可作为军用规格 [128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 18 页 / 551 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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PRELIMINARY
SPECIFICATION
Austin Semiconductor, Inc.
128K x 32 Radiation Tolerant EEPROM
AVAILABLE AS MILITARY SPECIFICATIONS
MIL-PRF-38534 compliant
• SPACE Level Process Flow
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
EEPROM
AS8ERLC128K32
(Top View)
68 Lead CQFP
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
10
60
11
59
12
58
13
57
14
56
15
55
16
54
17
53
18
52
19
51
20
50
21
49
22
48
23
47
24
46
25
45
26
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
Vcc
A11
A12
A13
*A15
*A14
A16
CS1\
OE\
CS2\
NC
WE2\
WE3\
WE4\
NC
NC
RDY
RES\
A0
A1
A2
A3
A4
A5
CS3\
GND
CS4\
WE1\
A6
A7
A8
A9
A10
Vcc
PIN ASSIGNMENT
FEATURES
Access time of 250ns , 300ns
• Operation with single
3.3V (+ .3V)
supply
• LOW Power Dissipation:
Active(Worst case):
300mW
(MAX), Max Speed Operation
Standby(Worst case):
7.2mW(MAX),
Battery Back-up Mode
• Automatic Byte Write: 15 ms (MAX)
• Automatic Page Write (128 bytes): 15 ms (MAX)
• Data protection circuit on power -on/off
• Low power CMOS MNOS cell Technology
• 10
4
Erase/Write cycles (in Page Mode)
• Software data protection
• TTL Compatible Inputs and Outputs
• Data Retention: 10 years
• Ready/Busy\ and Data Polling Signals
• Write protection by RES\ pin
• Radiation Tolerant: Proven total dose 40K to 100K RADS*
• Shielded Package for Best Radiation Immunity
• Operating Temperature Ranges:
Military: -55
o
C to +125
o
C
Industrial: -40
o
C to +85
o
C
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
*Pin #'s 31 and 32, A15 and A14 respectively, are reversed from the AS8E128K32. Correct
use of these address lines is required for operation of the SDP mode to work properly.
PIN NAME
A0 to A16
I/O0 to I/O31
OE\
CE\
WE\
V
CC
FUNCTION
Address Input
Data Input/Output
Output Enable
Chip Enable
Write Enable
Power Supply
OPTIONS
• Timing
250 ns
300 ns
• Package
Ceramic Quad Flat pack w/ formed leads
Ceramic Quad Flat pack w/ tie bar
Shielded Ceramic Quad Flat pack
Shielded Ceramic Quad Flat pack
MARKINGS
-250
-300
Ground
V
SS
RDY/BUSY\ Ready Busy
RES\
Reset
Q
QB
SQ
SQB
No. 703Q
No. 703QB
No. 703SF
No. 703SQB
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS8ERLC128K32 is a 4 Mega-
bit Radiation Tolerant EEPROM Module organized as 128K x 32 bit.
User configurable to 256K x16 or 512Kx 8. The module achieves high
speed access, low power consumption and high reliability by
employing advanced CMOS memory technology.
The military grade product is manufactured in compliance to
MIL-STD 883, making the AS8ERLC128K32 ideally suited for mili-
tary or space applications.
The module is offered as a 68 lead 0.880 inch square ceramic
quad flat pack. It has a max. height of 0.200 inch (non-shielded). This
package design is targeted for those applications which require low
profile SMT Packaging.
* contact factory for test reports. ASI does not guarantee or warrant
these performance levels, but references these third party reports.
AS8ERLC128K32
Rev. 1.9 06/06
FUNCTIONAL BLOCK DIAGRAM
For more products and information
please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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