欢迎访问ic37.com |
会员登录 免费注册
发布采购

AS8ERLC128K32QB-300/XT 参数 Datasheet PDF下载

AS8ERLC128K32QB-300/XT图片预览
型号: AS8ERLC128K32QB-300/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×32的耐辐射EEPROM可作为军用规格 [128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 18 页 / 551 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
 浏览型号AS8ERLC128K32QB-300/XT的Datasheet PDF文件第5页浏览型号AS8ERLC128K32QB-300/XT的Datasheet PDF文件第6页浏览型号AS8ERLC128K32QB-300/XT的Datasheet PDF文件第7页浏览型号AS8ERLC128K32QB-300/XT的Datasheet PDF文件第8页浏览型号AS8ERLC128K32QB-300/XT的Datasheet PDF文件第10页浏览型号AS8ERLC128K32QB-300/XT的Datasheet PDF文件第11页浏览型号AS8ERLC128K32QB-300/XT的Datasheet PDF文件第12页浏览型号AS8ERLC128K32QB-300/XT的Datasheet PDF文件第13页  
PRELIMINARY
SPECIFICATION
Austin Semiconductor, Inc.
TOGGLE BIT
EEPROM
AS8ERLC128K32
This device provides another function to determine the internal programming cycle. If the EEPROM is set to read mode
during the internal programming cycle, I/O6 will charge from "1" to "0" (toggling) for each read. When the internal pro-
gramming cycle is finished, toggling of I/O6 will stop and the device can be accessible for next read or program.
TOGGLE BIT WAVEFORM
Address
CE\
t
CE3
4
Next Mode
WE\
OE\
t
OEH
I/O6
Din
Dout
1
t
OE3
t
OES
Dout
Dout
2
Dout
2
t
DW
t
WC
NOTES:
1) I/O6 beginning state is "1".
2) I/O6 ending state will vary.
3) See AC read characteristics.
4) Any locations can be used, but the address must be fixed.
SOFTWARE DATA PROTECTION TIMING WAVEFORM (In protection mode)
V
CC
CE\
WE\
Address
Data (each byte)
5555
AA
AAAA or
2AAA
55
5555
A0
* During this write cycle, data is physically written to the address provided.
AS8ERLC128K32
Rev. 1.9 06/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
{
Write Data
t
BLC
t
BLC
t
BLC
t
WC
Write Address*