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AS8F128K32Q-60/IT 参数 Datasheet PDF下载

AS8F128K32Q-60/IT图片预览
型号: AS8F128K32Q-60/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×32的FLASH快闪存储器阵列 [128K x 32 FLASH FLASH MEMORY ARRAY]
分类和应用: 闪存存储
文件页数/大小: 22 页 / 390 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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FLASH
Austin Semiconductor, Inc.
Program and Erase Operation Status
During an erase or program operation, the system may check
the status of the operation by reading the status bits on I/O31–
I/O0. Standard read cycle timings and I
CC
read specifications
apply. Refer to “Write Operation Status” for more information,
and to each AC Characteristics section in the appropriate data
sheet for timing diagrams.
AS8F128K32
Autoselect Mode
The autoselect mode provides manufacturer and device
identification, and sector protection verification, through
identifier codes output on I/O31–I/O0. This mode is primarily
intended for programming equipment to automatically match a
device to be programmed with its corresponding programming
algorithm. However, the autoselect codes can also be accessed
in-system through the command register.
When using programming equipment, the autoselect mode
requires V
ID
(11.5 V to 12.5 V) on address pin A9. Address pins
A6, A1, and A0 must be as shown in Autoselect Codes (High
Voltage Method) table. In addition, when verifying sector
protection, the sector address must appear on the appropriate
highest order address bits. Refer to the corresponding Sector
Address Tables. The Command Definitions table shows the
remaining address bits that are don’t care. When all necessary
bits have been set as required, the programming equipment
may then read the corresponding identifier code on I/O31–
I/O0.
To access the autoselect codes in-system, the host system
can issue the autoselect command via the command register, as
shown in the Command Definitions table. This method does
not require V
ID
. See “Command Definitions” for details on
using the autoselect mode.
Standby Mode
When the system is not reading or writing to the device, it
can place the device in the standby mode. In this mode, current
consumption is greatly reduced, and the outputs are placed in
the high impedance state, independent of the OE\ input.
The device enters the CMOS standby mode when the CEx\
pin is held at V
CC
± 0.5 V. (Note that this is a more restricted
voltage range than V
IH
.) The device enters the TTL standby
mode when CEx\ is held at V
IH
. The device requires the
standard access time (t
CE
) before it is ready to read data.
If the device is deselected during erasure or programming,
the device draws active current until the operation is completed.
I
CC3
in the DC Characteristics tables represents the standby
current specification.
Output Disable Mode
When the OE\ input is at V
IH
, output from the device is
disabled. The output pins are placed in the high impedance
state.
TABLE 2: Sector Addresses Table (Each Byte)
SECTOR
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
A16
0
0
0
0
1
1
1
1
A15
0
0
1
1
0
0
1
1
A14
0
1
0
1
0
1
0
1
ADDRESS RANGE
00000h - 03FFFh
04000h - 07FFFh
08000h - 0BFFFh
0C000h - 0FFFFh
10000h - 13FFFh
14000h - 17FFFh
18000h - 1BFFFh
1C000h - 1FFFFh
AS8F128K32
Rev. 2.0 5/03
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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