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AS8F2M32QW-120/XT 参数 Datasheet PDF下载

AS8F2M32QW-120/XT图片预览
型号: AS8F2M32QW-120/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×32的FLASH闪存模块 [2M x 32 FLASH FLASH MEMORY MODULE]
分类和应用: 闪存内存集成电路
文件页数/大小: 12 页 / 382 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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AUSTIN SEMICONDUCTOR, INC.
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS
*
Voltage on any pin relative to V
SS
, V
T**
..............-2.0V to +7.0V
Power Dissipation, P
T
...............................................................4W
Storage Temperature, T
stg
..................................-65°C to +125°C
Short Circuit Output Current, I
OS
(1 output at a time)......100mA
Endurance - Write/Erase Cycles
......
..............100,000 min cycles
Data Retention...................................................................20 years
AS8F2M32
FLASH
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Expo-
sure to absolute maximum rating conditions for extended pe-
riods may affect reliability.
**Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow, and humidity
(plastics).
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(4.5V < VCC < 5.5V , -55°C < T
A
< +125°C)
DESCRIPTION
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read
V
CC
Active Current for Program or Erase
V
CC
CMOS Standby
V
CC
Standby Current
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage
CONDITIONS
V
CC
= 5.5, V
IN
= GND to V
CC
V
CC
= 5.5, V
IN
= GND to V
CC
CS\ = V
IL
, OE\ = V
IH
CS\ = V
IL
, OE\ = V
IH
V
CC
= 5.5V, All Inputs @ V
CC
- 0.2V or V
SS
+0.2V,
RESET\ = CS\
1-4
= V
CC
-0.2V
V
CC
= 5.5, CS\ = V
IH
, RESET\ = V
CC
± 0.3V, f=0
I
OL
= 12.0 mA, V
CC
= 4.5
I
OH
= -2.5 mA, V
CC
= 4.5
SYMBOL
I
LI
I
LOx32
I
CC1
I
CC2
I
SB
I
CC3
V
OL
V
OH
V
LKO
0.85 x V
CC
3.2
4.2
MIN
-10
-10
MAX
10
10
160
240
4
8
0.45
UNITS
µA
µA
mA
mA
mA
mA
V
V
V
PARAMETER
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
SYMBOL
V
CC
V
SS
V
IH
V
IL
MIN
4.5
0
2.2
-0.5
TYP
5.0
0
---
---
MAX
5.5
0
V
CC
+ 0.5
+0.8
UNIT
V
V
V
V
CAPACITANCE
(T
A
= +25°C)*
PARAMETER
OE\
WE\
1-4
CS\
1-4
Data I/O
Address input
SYM
C
OE
C
WE
C
CS
C
I/O
C
AD
V
IN
= 0V, f = 1.0 MHz
CONDITIONS
MAX
50
50
20
20
50
UNITS
pF
pF
pF
pF
pF
*Parameter is guaranteed, but not tested.
AS8F2M32
Rev. 2.5 05/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3