欢迎访问ic37.com |
会员登录 免费注册
发布采购

AS8F512K32P-120/883C 参数 Datasheet PDF下载

AS8F512K32P-120/883C图片预览
型号: AS8F512K32P-120/883C
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32的FLASH快闪存储器阵列 [512K x 32 FLASH FLASH MEMORY ARRAY]
分类和应用: 闪存存储
文件页数/大小: 23 页 / 293 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
 浏览型号AS8F512K32P-120/883C的Datasheet PDF文件第8页浏览型号AS8F512K32P-120/883C的Datasheet PDF文件第9页浏览型号AS8F512K32P-120/883C的Datasheet PDF文件第10页浏览型号AS8F512K32P-120/883C的Datasheet PDF文件第11页浏览型号AS8F512K32P-120/883C的Datasheet PDF文件第13页浏览型号AS8F512K32P-120/883C的Datasheet PDF文件第14页浏览型号AS8F512K32P-120/883C的Datasheet PDF文件第15页浏览型号AS8F512K32P-120/883C的Datasheet PDF文件第16页  
FLASH
Austin Semiconductor, Inc.
AS8F512K32
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55°C < TA < 125°C; V
CC
= 5V +/- 10%)
Erase and Program WE\ Controlled
Parameter
Symbol
JEDEC
Std.
t
WC
t
AVAV
t
AS
t
AVWL
t
AH
t
WLAX
t
DS
t
DVWH
t
DH
t
WHDX
t
OES
t
GHWL
t
ELWL
t
WHEH
t
WLWH
t
WHWL
t
WHWH1
t
WHWH2
t
WHWH3
t
VCHEL
t
GHWL
t
CS
t
CH
t
WP
t
WPH
t
WHWH1
t
WHWH2
t
WHWH3
Parameter Description
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Write Enable High to Input Transition
Output Enable Setup Time
Read Recover time Before Write
(OE\ high to WE\ low)
CE\ Setup Time
CE\ Hold Time
Write Pulse Width
Write Pulse Width High
Programming Operation
Sector Erase Operation
Chip Erase Operation
V
CC
Setup Time
Chip Program Time
-70
70
45
30
Speed Options
-90
-120
90
120
0
45
45
0
0
0
0
0
35
45
20
16
30
120
50
50
50
50
50
50
Units
-150
150
50
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
sec
sec
us
sec
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Max
Max
Min
Max
AS8F512K32
Rev. 5.2 09/07
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12