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AS8FLC2M32BP-100/XT 参数 Datasheet PDF下载

AS8FLC2M32BP-100/XT图片预览
型号: AS8FLC2M32BP-100/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 全封闭,多芯片模块( MCM ) 64MB, 2M ×32 , 3.3Volt引导块闪存阵列 [Hermetic, Multi-Chip Module (MCM) 64Mb, 2M x 32, 3.3Volt Boot Block FLASH Array]
分类和应用: 闪存
文件页数/大小: 29 页 / 403 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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AUSTIN SEMICONDUCTOR, INC.
Austin Semiconductor, Inc.
Hermetic, Multi-Chip Module
(MCM)
64Mb, 2M x 32, 3.3Volt Boot Block FLASH
Array
Available via Applicable Specifications:
MIL-PRF-38534, Class H
I/O0
DQ0
I/O1
DQ1
DQ2
I/02
I/O3
DQ3
I/O4
DQ4
I/O5
DQ5
I/O6
DQ6
DQ7
I/O7
GND
DQ8
I/O8
DQ9
I/O9
DQ10
I/O10
DQ11
I/O11
DQ12
I/012
DQ13
I/O13
DQ14
I/O14
DQ15
I/O15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
AS8FLC2M32
FLASH
FIGURE 1: PIN ASSIGNMENT
(Top View)
RESET\
A0
A1
A2
A3
A4
A5
CS3\
GND
CS4\
WE1\
A6
A7
A8
A9
A10
VCC
09
08
07
06
05
04
03
02
01
68
67
66
65
64
63
62
61
60
59
78
57
76
55
54
53
52
51
50
49
I/O16
DQ16
I/O17
DQ17
I/O18
DQ18
I/O19
DQ19
I/O20
DQ20
I/O21
DQ21
I/O22
DQ22
DQ23
I/O23
GND
I/O24
DQ24
I/O25
DQ25
I/O26
DQ26
I/O27
DQ27
I/O28
DQ28
DQ29
I/O29
DQ30
I/O30
DQ31
I/O31
FEATURES
64Mb device, total density, organized as 2M x 32
Bottom Boot Block (Sector) Architecture
(Contact factory for top boot)
Operation with single 3.0V Supply
Available in multiple Access time variations
Individual byte control via individual byte selects (CSx\)
Low Power CMOS
1,000,000 Erase/Program Cycles
Minimum 1,000,000 Program/Erase Cycles per sector
guaranteed
Sector Architecture:
One 16K byte, two 8K byte, one 32K byte and
thirty-one 64Kbyte sectors (byte mode)
Any combination of sectors can be concurrently erased
MCM supports full array (multi-chip) Erase
Embedded Erase and Program Algorithms
Erase Suspend/Resume; Supports reading data from or
programming data to a sector not being Erased
TTL Compatible Inputs and Outputs
Military and Industrial operating temperature ranges
[Package Designator QT]
48
47
46
45
44
39
40
41
42
DQ8
I/O8
DQ9
I/O9
DQ10
I/O10
VCC
A11
A12
A13
A14
A15
A16
CS1\
OE\
CS2\
A17
WE2\
WE3\
WE4\
A18
A19
NC
A20
Pin Assignment
(Top View)
Reset\
CS2\
GND
DQ11
I/O11
I/O15
DQ15
DQ14
I/O14
I/O24
DQ24
I/O25
DQ25
I/O26
DQ26
A7
A12
VCC
CS4\
NC
DQ27
I/O27
43
I/O31
DQ31
DQ30
I/O30
DQ29
I/O29
DQ28
I/O28
I/O13
DQ13
DQ12
I/O12
A14
A16
A11
A0
A18
DQ0
I/O0
DQ1
I/O1
DQ2
I/O2
A10
A9
A15
VCC
CS1\
A19
I/O3
DQ3
OE\
A17
WE\
I/O7
DQ7
DQ6
I/O6
A4
A5
A6
NC
CS3\
GND
DQ19
I/O19
A1
A2
A3
I/O23
DQ23
DQ22
I/O22
66 HIP
A20
NC
A13
A8
I/O16
DQ16
I/O17
DQ17
I/O18
DQ18
OPTION
Access Speed
70ns
90ns
100ns
120ns
Package
Ceramic Quad Flat Pack
Ceramic Hex Inline Pack
MARKING
-70
-90
-100
-120
I/O5
DQ5
I/O4
DQ4
I/O21
DQ21
DQ20
I/O20
[Package Designator
P
H]
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS8FLC2M32B is a 64Mb
FLASH Multi-Chip Module organized as 2M x 32 bits. The
module achieves high speed access, low power consumption
and high reliability by employing advanced CMOS memory
technology. The military grade product is manufactured in
compliance to the MIL-PRF-38534 specifications, making the
AS8FLC2M32B ideally suited for military or space applications.
The module is offered in a 68-lead 0.990 inch square ceramic
quad flat pack or 66-lead 1.185inch square ceramic Hex In-line
Package (HIP). The CQFP package design is targeted for those
applications, which require low profile SMT Packaging.
Q
P
Temperature Range
Full Mil (MIL-PRF-38534, Class H) /Q
Military Temp (-55
o
C to +125
o
C)
/XT
o
o
Industrial (-40 C to +85 C) /IT
For more products and information
please visit our web site at
www.austinsemiconductor.com
AS8FLC2M32B
Rev. 1.2 5/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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