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AMMC-5040-W50 参数 Datasheet PDF下载

AMMC-5040-W50图片预览
型号: AMMC-5040-W50
PDF下载: 下载PDF文件 查看货源
内容描述: 20-45 GHz的砷化镓功率放大器 [20-45 GHz GaAs Amplifier]
分类和应用: 射频和微波射频放大器微波放大器功率放大器
文件页数/大小: 10 页 / 374 K
品牌: AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
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AMMC-5040
Data Sheet
20 – 45 GHz GaAs Amplifier
Description
The AMMC-5040 is a high gain broadband amplifier
designed for both military applications and commercial
communication systems. This four-stage amplifier has
input and output matching circuitry for use in 50 ohm
environments. It is fabricated using PHEMT integrated
circuit structures that provide exceptional broadband
performance. The backside of this chip is both RF and DC
ground. This simplifies the assembly process and reduces
assembly related performance variations and costs. For
improved reliability and moisture protection, the die is
passivated at the active areas. This MMIC is a cost effective
alternative to hybrid (discrete-FET) amplifiers that require
complex tuning and assembly process.
Features
• Frequency range: 20 – 45 GHz
• High gain: 25 dB
• Gain flatness: ±1.5 dB
• Return loss:
Input: 17 dB, Output: 11 dB
• Output power:
P
-1dB
= 21 dBm at 38 GHz
P
-3dB
= 22.5 dBm at 38 GHz
Applications
• Broadband gain block
• Broadband driver amplifier
• Point-to-point radio
• LMDS
• EW
• Instrumentation
• Frequency Multiplier (X2 and X3)
Chip Size:
Chip Thickness:
Pad Dimensions:
1720 x 760 µm (67.7 x 29.9 mils)
100 ± 10 µm (4 ± 0.4 mils)
75 x 75 µm (3 ± 0.4 mils)
Chip Size Tolerance: ±10 µm (±0.4 mils)
Absolute Maximum Ratings
[1]
Symbol
V
D1,2-3-4
V
G1,2-3-4
I
DD
P
in
T
ch
T
b
T
stg
T
max
Parameters/Conditions
Drain Voltage
Gate Voltage
Total Drain Current
CW Input Power
Operating Channel Temperature
Operating Backside Temperature
Storage Temperature
Units
V
V
mA
dBm
°C
°C
°C
Min.
-3.0
Max.
5
0.5
550
21
+160
-55
-65
+75
+165
+300
Max. Assembly Temp (60 sec max) °C
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to this device.