欢迎访问ic37.com |
会员登录 免费注册
发布采购

AMMC-5618-W50 参数 Datasheet PDF下载

AMMC-5618-W50图片预览
型号: AMMC-5618-W50
PDF下载: 下载PDF文件 查看货源
内容描述: 6 - 20 GHz的放大器 [6 - 20 GHz Amplifier]
分类和应用: 射频和微波射频放大器微波放大器
文件页数/大小: 8 页 / 280 K
品牌: AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
 浏览型号AMMC-5618-W50的Datasheet PDF文件第2页浏览型号AMMC-5618-W50的Datasheet PDF文件第3页浏览型号AMMC-5618-W50的Datasheet PDF文件第4页浏览型号AMMC-5618-W50的Datasheet PDF文件第5页浏览型号AMMC-5618-W50的Datasheet PDF文件第6页浏览型号AMMC-5618-W50的Datasheet PDF文件第7页浏览型号AMMC-5618-W50的Datasheet PDF文件第8页  
AMMC - 5618
6 - 20 GHz Amplifier
Data Sheet
Description
Avago Technologies’ AMMC-5618 6-20 GHz MMIC is an
efficient two-stage amplifier designed to be used as a
cascadable intermediate gain block for EW applications.
In communication systems, it can be used as a LO buffer,
or as a transmit driver amplifier. It is fabricated using a
PHEMT integrated circuit structure that provides excep-
tional efficiency and flat gain performance. During typi-
cal operation with a single 5-V supply, each gain stage
is biased for Class-A operation for optimal power output
with minimal distortion. The RF input and output have
matching circuitry for use in 50-W environments. The
backside of the chip is both RF and DC ground. This helps
simplify the assembly process and reduces assembly re-
lated performance variations and costs. For improved re-
liability and moisture protection, the die is passivated at
the active areas. The MMIC is a cost effective alternative
to hybrid (discrete FET) amplifiers that require complex
tuning and assembly processes.
AMMC-5618 Absolute Maximum Ratings [1]
Symbol Parameters/ Conditions Units Min. Max.
V
D1
, V
D2
Drain Supply Voltage
V
G1
V
G2
I
D1
I
D2
P
in
T
ch
T
b
T
stg
T
max
Optional Gate Voltage
Optional Gate Voltage
Drain Supply Current
Drain Supply Current
RF Input Power
Channel Temp.
Operating Backside
Temp.
Storage Temp.
Maximum Assembly
Temp. (60 sec max)
V
V
V
mA
mA
dBm
°C
°C
°C
°C
-55
-65
+165
+300
-5
-5
7
+1
+1
70
84
20
+150
Chip Size: 920 x 920
µm
(36.2 x 36.2 mils)
Chip Size Tolerance:
±
10µm (±0.4 mils)
Chip Thickness: 100
±
10µm (4
±
0.4 mils)
Pad Dimensions: 80 x 80
µm
(3.1 x 3.1 mils or larger)
Features
• Frequency Range: 6 - 20 GHz
• High Gain: 14.5 dB Typical
• Output Power: 19.5 dBm Typical
• Input and Output Return Loss: < -12 dB
• Flat Gain Response:
±
0.3 dB Typical
• Single Supply Bias: 5 V @ 107 mA
Applications
• Driver/Buffer in microwave communication systems
• Cascadable gain stage for EW systems
• Phased array radar and transmit amplifiers
Note:
1. Operation in excess of any one of these conditions may result in
permanent damage to this device.
Note: These devices are ESD sensitive. The following precautions are strongly recommended:
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices.