AMMC-5023 DC Specifications/Physical Properties
[1]
Symbol
V
D1
, V
D2
V
G1
, V
G2
I
D1
, I
D2
I
D1
+I
D2
θ
ch-b
Notes:
Parameters and Test Conditions
Recommended Drain Supply Voltage
Gate Supply Voltage
[2]
(V
D1
≤ V
D1(max)
, V
D2
≤ V
D2(max)
)
Input and Output Stage Drain Supply Current
(V
G1
= V
G2
= Open, V
D1
=
V
D2
= 5 V)
Total Drain Supply Current
(V
G1
=
V
G2
= Open, V
D1
= V
D2
= 5 V)
Thermal Resistance
[3]
(Backside temperature, T
b
= 25°C)
Units
V
V
mA
mA
°C/W
Min.
3
Typ.
5
0.8
14
Max.
7
13
28
44
35
1. Backside ambient operating temperature T
A
= 25°C unless otherwise noted.
2. Open circuit voltage at V
G1
and V
G2
when V
D1
and V
D2
are 5 Volts.
3. Channel-to-backside Thermal Resistance (θ
ch-b
) = 66°C/W at T
channel
(T
c
) = 150°C as measured using the liquid crystal method. Thermal Resistance
at backside temperature (T
b
) = 25°C calculated from measured data.
RF Specifications
[4]
(V
G1
= V
G2
= Open, V
D1
= V
D2
= 5V, I
D1
+ I
D2
= 28 mA, Z
in
= Z
0
= 50Ω)
Symbol
|S
21
|
2
∆|S
21
|
2
RL
in
RL
out
|S
12
|
2
P
-1dB
P
sat
OIP3
NF
Note:
Parameters and Test Conditions
Small-signal Gain
Small-signal Gain Flatness
Input Return Loss
Output Return Loss
Isolation
Output Power @ 1 dB Gain Compression
f = 23 GHz
Saturated Output Power
(@ 3 dB Gain Compression)
Output 3
rd
Order Intercept Point, 22.4 GHz
Rf
in1
= Rf
in2
= -20 dBm,
∆f
= 2 MHz 25.5 GHz
Noise Figure
22 GHz
25 GHz
Units
dB
dB
dB
dB
dB
dBm
dBm
dB
dB
21.2–23.6 GHz
Min. Typ.
Max.
21
10
9
40
23.6
±1.5
12
12
50
9.5
10.5
18
2.3
2.8
28
24.5–26.5 GHz
Min. Typ.
Max.
17
10
10
40
19
±1.2
11.5
17
43
10
11.5
25
24
2.3
2.8
4. 100% on-wafer RF test is done at frequency = 21.2, 22.4, 23.6, 24.5, 25.5 and 26.5 GHz, except as noted.
2
AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
