Table 1. Absolute Maximum Ratings
[1]
Symbol
Parameters and Test Conditions
Unit
Minimum
Maximum
V
dd
I
dd
P
dc
P
in
T
ch
T
stg
T
max
Positive Drain Voltage
Total Drain Current
DC Power Dissipation
RF CW Input Power
Operating Channel Temperature
Storage Case Temperature
Maximum Assembly Temperature (20 sec max)
V
mA
W
dBm
°C
°C
°C
-
-
-
-
-
-65
-
7.5
35
.0
20
+50
+50
+260
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
The absolute maximum ratings for Vdd, Idd, Pdc and Pin were determined at an ambient temperature of 25°C unless noted otherwise.
Table 2. DC Specifications
[1]
Symbol
Parameters and Test Conditions
Unit
Minimum
Typical
Maximum
V
dd
I
dd
q
ch-b
Recommended Drain Supply Voltage
Total Drain Supply Current
Thermal Resistance
[2]
V
mA
°C/W
-
70
-
5
95
28
-
30
-
Notes:
1. Ambient operation temperature T
A
= 25°C unless otherwise noted.
2. Channel-to-board Thermal Resistance is measured using Infrared Microscopy method.
Table 3. RF Specifications
[2,3]
(T
A
= 25
°
C, Freq = 18GHz, Vdd = 5V, Idd = 95mA)
Symbol
Parameters and Test Conditions
Unit
Minimum
Typical
Maximum
|S2|
2
RLin
RLout
|S2|
2
PdB
OIP3
NF
Small signal Gain
[,4]
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power at dB Gain Compression
Output 3rd Order Intercept Point
Noise Figure
[,4]
dB
dB
dB
dB
dBm
dBm
dB
5.5
-
-
-
-
-
-
7.5
.5
.6
-43.0
4.8
22.5
5.
9.5
-
-
-
-
-
7.0
Notes:
1. Typical value determined from a sample size of 500 parts from 2 wafers.
2. Small/large signal data measured in a fully de-embedded test fixture at T
A
= 25 degree Celsius.
3. Specifications are derived from measurements in a 50 Ohm test environment. Aspects of the amplifier performance may be improved over a
narrower bandwidth by application of additional conjugate, linearity, or low noise matching.
4. All tested parameters guaranteed with measurement accuracy ± 0.5 dB for NF and ± 1.0 dB for gain.
2
AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
