Absolute Maximum Ratings (Ta=25˚C)
Parameter
Infrared Diode
Power Dissipation
[]
Peak Forward Current
( 300pps, 0 μs pulse)
Continuous Forward Current
Reverse Voltage
Phototransistor
Power Dissipation
[]
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Operating Temperature Range
Storage Temperature Range
Lead Soldering Termperature
(.6mm(0.063 ” ) From Case)
Pc
V
CEO
V
ECO
I
C
T
OP
T
STG
T
S
00
30
5
20
mW
V
V
mA
-35˚C to +65˚C
-40˚C to +00˚C
260˚C for 5
seconds
P
D
I
CP
I
F
V
R
75
3
50
5
mW
A
mA
V
Symbol
Max Rating
Unit
Note:
1. Derate Linearly 1.33mW/ ˚C from 25˚C
Electrical / Optical Characteristics (Ta=25˚C)
Parameter
Input Diode
Forward Voltage
Reverse Current
Output Phototransistor
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Coupler
Collector-Emitter Saturation Voltage
On State Collector Current
[2]
V
CE(SAT)
I
C(ON)
0.6
0.4
V
mA
I
C
= 0.08mA, I
F
= 20mA
V
CE
= 5V, I
F
= 20mA
V
(BR)CEO
V
(BR)ECO
I
CEO
30
5
00
V
V
nA
I
C
= mA
I
E
= 0.mA
V
CE
= 0V
V
F
I
R
.2
.6
00
V
μA
I
F
=20mA
V
R
= 5V
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Note:
2. Reflective surface is Eastman Kodak(or equivalent) neutral white paper with 90% diffused reflectance placed at 3.81mm(0.15”) from read head.
2
AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
