欢迎访问ic37.com |
会员登录 免费注册
发布采购

ASDL-6770-C22 参数 Datasheet PDF下载

ASDL-6770-C22图片预览
型号: ASDL-6770-C22
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能硅NPN光电晶体管在侧面看包装 [High Performance Silicon NPN Phototransistor in Side Look Package]
分类和应用: 晶体光电晶体管光电晶体管
文件页数/大小: 4 页 / 181 K
品牌: AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
 浏览型号ASDL-6770-C22的Datasheet PDF文件第1页浏览型号ASDL-6770-C22的Datasheet PDF文件第2页浏览型号ASDL-6770-C22的Datasheet PDF文件第4页  
Absolute Maximum Ratings at T
A
=25°C
Parameter
Power Dissipation
Collector Emitter Voltage
Emitter Collector Voltage
Operating Temperature
Storage Temperature
Junction temperature
Lead Soldering Temperature
[ .6mm (0.06”) From Body ]
Symbol
P
DISS
V
CEO
V
ECo
T
O
T
S
T
J
60°C for 5 seconds
-40
-55
Min.
Max
00
0
5
85
00
0
Unit
mW
V
V
°C
°C
°C
Electrical Characteristics at 25°C
Parameter
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector Emitter
Saturation Voltage
Collector Dark Current
Thermal Resistance,
Junction to Pin
Symbol
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
I
CEO
Rqjp
50
Min.
0
5
0.4
00
Typ.
Max.
Unit
V
V
V
nA
°C/W
Condition
Ic= mA
Ee = 0mW/cm

Ie = 00µA
Ee = 0mW/cm

Ic = 0.mA
Ee = mW/cm

VCE=0V
Ee=0mW/cm

Optical Characteristics at 25°C
Parameter
Viewing Angle
Wavelength of Peak sensitivity
Spectral BandWidth
Rise Time
Symbol
q
/
λ
PK
Δλ
t
r
400
Min.
Typ.
40
900
900
0
00
Max.
Unit
Deg
nm
nm
µs
Vcc = 5V
Ic = mA
RL = KΩ
Vcc = 5V
Ic = mA
RL = KΩ
VCE = 5V
Ee = mW/cm

λ = 940nm
Condition
Fall Time
t
f
5
µs
On State Collector Current
IC(ON)
.04
.40
mA