AT-42035
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Description
Avago Technologies' AT-42035 is a general purpose NPN bipo-
lar transistor that offers excellent high frequency performance.
The AT-42035 is housed in a cost effective surface mount 100
mil micro-X package. The 4 micron emitter-to-emitter pitch
enables this transistor to be used in many different functions.
The 20 emitter finger interdigitated geometry yields a medium
sized transistor with impedances that are easy to match for low
noise and medium power applications. This device is designed
for use in low noise, wideband amplifier, mixer and oscilla-
tor applications in the VHF, UHF, and microwave frequencies.
An optimum noise match near 50 Ω up to 1 GHz, makes this
device easy to use as a low noise amplifier.
The AT-42035 bipolar transistor is fabricated using Avago’s
10 GHz f
T
Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and gold
metalization in the fabrication of this device.
Features
•
High Output Power:
21.0 dBm Typical P
1 dB
at 2.0 GHz
20.5 dBm Typical P
1 dB
at 4.0 GHz
• High Gain at 1 dB Compression:
14.0 dB Typical G
1 dB
at 2.0 GHz
9.5 dB Typical G
1 dB
at 4.0 GHz
• Low Noise Figure:
1.9 dB Typical NF
O
at 2.0 GHz
• High Gain-Bandwidth Product: 8.0
GHz Typical f
T
• Cost Effective Ceramic Microstrip Package
35 micro-X Package
AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
