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AT-42085G 参数 Datasheet PDF下载

AT-42085G图片预览
型号: AT-42085G
PDF下载: 下载PDF文件 查看货源
内容描述: 高达6 GHz的中等功率硅双极晶体管 [Up to 6 GHz Medium Power Silicon Bipolar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 158 K
品牌: AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
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AT-42085
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-42085 is a general purpose NPN bipolar
transistor that offers excellent high frequency
performance. The AT-42085 is housed in a low cost .085"
diameter plastic package. The 4 micron emitter-to-emitter
pitch enables this transistor to be used in many different
functions. The 20 emitter finger interdigitated geometry
yields a medium sized transistor with impedances that
are easy to match for low noise and medium power
applications. Applications include use in wireless systems
as an LNA, gain stage, buffer, oscillator, and mixer. An
optimum noise match near 50Ω up to 1 GHz, makes this
device easy to use as a low noise amplifier.
Features
High Output Power:
20.5 dBm Typical P1 dB at 2.0 GHz
High Gain at 1 dB Compression:
14.0 dB Typical G1 dB at 2.0 GHz
Low Noise Figure:
2.0 dB Typical NFO at 2.0 GHz
High Gain-Bandwidth Product: 8.0 GHz Typical fT
Low Cost Plastic Package
Lead-free Option Available
The AT-42085 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
85 Plastic Package
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by
the use of ion-implantation, self-alignment techniques,
and gold metalization in the fabrication of this device.