AT-42070 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
1.5
0
1
80
600
00
-65 to 00
Thermal Resistance
[2,4]
:
θ
jc
= 150°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. Tcase = 25°C.
3. Derate at 6.7 mW/°C for Tc > 110°C.
4. The small spot size of this technique
results in a higher, though more accurate
determination of θjc than do alternate
methods. See MEASUREMENTS section
“Thermal Resistance” for more information.
Electrical Specifications, T
A
= 25°C
Symbol
|S
1E
|
P
1 dB
G
1 dB
NF
O
G
A
f
T
h
FE
I
CBO
I
EBO
C
CB
Parameters and Test Conditions
[1]
Insertion Power Gain; V
CE
= 8 V, I
C
= 35 mA
Power Output @ 1 dB Gain Compression
V
CE
= 8 V, I
C
= 35 mA
1 dB Compressed Gain; V
CE
= 8 V, I
C
= 35 mA
Optimum Noise Figure: V
CE
= 8 V, I
C
= 10 mA
Gain @ NF
O
; V
CE
= 8 V, I
C
= 10 mA
Gain Bandwidth Product: V
CE
= 8 V, I
C
= 35 mA
Forward Current Transfer Ratio; V
CE
= 8 V, I
C
= 35 mA
Collector Cutoff Current; V
CB
= 8 V
Emitter Cutoff Current; V
EB
= 1 V
Collector Base Capacitance
[1]
: V
CB
= 8 V, f = 1 MHz
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f= 4.0 GHz
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f = 4.0 GHz
Units
dB
dBm
dB
dB
dB
GHz
—
µA
µA
pF
30
Min.
10.5
Typ.
11.5
5.5
1.0
0.5
15.0
10.0
1.9
3.0
14.0
10.5
8.0
150
70
0.
.0
Max.
0.8
Note:
1. For this test, the emitter is grounded.