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AT-42070 参数 Datasheet PDF下载

AT-42070图片预览
型号: AT-42070
PDF下载: 下载PDF文件 查看货源
内容描述: 高达6 GHz的中等功率硅双极晶体管 [Up to 6 GHz Medium Power Silicon Bipolar Transistor]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管放大器
文件页数/大小: 5 页 / 140 K
品牌: AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
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AT-42070 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
1.5
0
1
80
600
00
-65 to 00
Thermal Resistance
[2,4]
:
θ
jc
= 150°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. Tcase = 25°C.
3. Derate at 6.7 mW/°C for Tc > 110°C.
4. The small spot size of this technique
results in a higher, though more accurate
determination of θjc than do alternate
methods. See MEASUREMENTS section
“Thermal Resistance” for more information.
Electrical Specifications, T
A
= 25°C
Symbol
|S
1E
|

P
1 dB
G
1 dB
NF
O
G
A
f
T
h
FE
I
CBO
I
EBO
C
CB
Parameters and Test Conditions
[1]
Insertion Power Gain; V
CE
= 8 V, I
C
= 35 mA
Power Output @ 1 dB Gain Compression
V
CE
= 8 V, I
C
= 35 mA
1 dB Compressed Gain; V
CE
= 8 V, I
C
= 35 mA
Optimum Noise Figure: V
CE
= 8 V, I
C
= 10 mA
Gain @ NF
O
; V
CE
= 8 V, I
C
= 10 mA
Gain Bandwidth Product: V
CE
= 8 V, I
C
= 35 mA
Forward Current Transfer Ratio; V
CE
= 8 V, I
C
= 35 mA
Collector Cutoff Current; V
CB
= 8 V
Emitter Cutoff Current; V
EB
= 1 V
Collector Base Capacitance
[1]
: V
CB
= 8 V, f = 1 MHz
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f= 4.0 GHz
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f = 4.0 GHz
f = .0 GHz
f = 4.0 GHz
Units
dB
dBm
dB
dB
dB
GHz
µA
µA
pF
30
Min.
10.5
Typ.
11.5
5.5
1.0
0.5
15.0
10.0
1.9
3.0
14.0
10.5
8.0
150
70
0.
.0
Max.
0.8
Note:
1. For this test, the emitter is grounded.