AT-64020
Up to 4 GHz Linear Power Silicon Bipolar Transistor
Data Sheet
Description
Features
The AT-64020 is a high performance NPN silicon bipolar
•
High Output Power:
transistor housed in a hermetic BeO disk package for
27.5 dBm Typical P1 dB at 2.0 GHz
good thermal characteristics. This device is designed for
26.5 dBm Typical P1 dB at 4.0 GHz
use in medium power, wide band amplifier and oscillator
•
High Gain at 1 dB Compression:
applications operating over VHF, UHF and microwave
10.0 dB Typical G1 dB at 2.0 GHz
frequencies.
6.5 dB Typical G1 dB at 4.0 GHz
Excellent device uniformity, performance and reliability
•
35% Total Efficiency
are produced by the use of ion-implantation, self-
•
Emitter Ballast Resistors
alignment techniques, and gold metallization in the
•
Hermetic, Metal/Beryllia Package
fabrication of these devices. The use of ion-implanted
ballast resistors ensures uniform current distribution
through the multiple emitter fingers.
200 mil BeO Package
AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
