80
1.4
1.2
RELATIVE INTENSITY
(NORMALIZED AT 50 mA)
HSMC/J/L/A/E
HSMZ/V/U
RELATIVE LUMINOUS INTENSITY
(NORMALIZED AT 30 mA)
1.2
1.0
0.8
0.6
0.4
0.2
0
FORWARD CURRENT – mA
70
60
50
40
30
20
10
HSMM/K/N
0
0
1
2
3
4
5
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
FORWARD VOLTAGE – V
FORWARD CURRENT – mA
FORWARD CURRENT – mA
Figure 2. Forward Current Vs. Forward Voltage.
Figure 3. Relative Intensity Vs. Forward
Current (AlInGaP).
Figure 4. Relative Intensity Vs. Forward
Current (InGaN).
MAXIMUM FORWARD CURRENT – mA
MAXIMUM FORWARD CURRENT – mA
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
470°C/W
350°C/W
300°C/W
35
DOMINANT WAVELENGTH – nm
540
530
520
510
500
490
480
470
460
0
5
10
15
InGaN BLUE
20
25
30
35
InGaN CYAN
InGaN GREEN
30
300°C/W
25
350°C/W
20
470°C/W
15
10
5
0
0
20
40
60
80
100
120
AMBIENT TEMPERATURE –
°C
AMBIENT TEMPERATURE –
°C
CURRENT – mA
Figure 5a. Maximum Forward Current Vs.
Ambient Temperature, Derated Based On
T
J
max = 110°C (AlInGaP).
Figure 5b. Maximum Forward Current Vs.
Ambient Temperature, Derated Based On
T
J
max = 110°C (InGaN).
Figure 6. Dominant Wavelength Vs. Forward
Current – InGaN Devices.
1.0
0.9
RELATIVE INTENSITY
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-90
-70
-50
-30
-10
10
30
50
70
90
ANGLE – DEGREES
Figure 7. Radiation Pattern.
5