Absolute Maximum Rating [1] Tc=25°C
Sym bol
V
dd
P
in
P
diss
T
j
T
STG
Param eter
Device Voltage, RF output to
ground
CW RF Input Power (Vdd = 3.3V )
Total Power Dissipation
[3]
Junction Temperature
Storage Tem perature
Units
V
dBm
W
o
o
Absolute M ax.
5
10
0.8
150
-65 to 150
Thermal Resistance [2]
(Vdd = 3.3V),
θ
jc = 33.3 °C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150 °C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb is 25
°C. Derate 30mW/ °C for Tb>123.36 °C.
C
C
Product Consistency Distribution Charts [4,5]
USL
LSL
30
35
40
45
50
55
24 24.2
24.6
25 25.2
25.6
26
Figure 1. Id@ 2.452GHz; Nominal = 40mA, USL: 55mA
Figure 2. P1dB @ 2.452GHz; Nominal = 25.3dBm, LSL: 24dB
LSL
23
24
25
26
27
28
Notes:
4. Distribution data sample size is 500 samples taken from 3 different
wafers and 3 different lots. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
5. Measurements are made on production test board, which
represents a trade-off between optimal Gain and P1dB. Circuit
losses have been de-embedded from actual measurements.
Figure 3. Gain@ 2.452GHz; Nominal = 25.5dB, LSL: 23 dB
2
AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
