@vic
AV2907
Amplifier Transistor
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
2N2907
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
–40
–60
–5.0
–600
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
TO–92
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10
m
Adc, IC = 0)
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = –10 V)
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
1. Pulse Test: Pulse Width
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
—
—
IEBO
ICEO
IBEX
—
—
—
–0.01
–10
–10
–10
–50
nAdc
nAdc
nAdc
–40
–60
–5.0
—
—
—
—
–50
Vdc
Vdc
Vdc
nAdc
µAdc
v
300
m
s, Duty Cycle
v
2.0%.
Cp
1
Website: http://www.avictek.com
Copyright @vic Electronics Corp.
1
AVICTEK [ Avic Technology ]
