@vic
AV8050
TO-92 Plastic-Encapsulate Transistors
AV8050 TRANSISTOR（ NPN
）
FEATURES
Power dissipation
P
CM
: 1 W（Tamb=25℃）
Collector current
I
CM
: 1.5 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
TO—92
1. EMITTER
2. BASE
3.COLLECTOR
1
2 3
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified
）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
H
FE
（
1
）
DC current gain
H
FE
（
2
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
V
CE
(sat)
V
BE
(sat)
V
BE
V
CE
= 1 V , I
C
=800 mA
I
C
= 800 mA, I
B
= 80 mA
I
C
= 800mA, I
B
= 80 mA
I
E
= 1.5A
V
CE
= 10 V, I
C
= 50mA
40
0.5
1.2
1.6
V
V
V
Test conditions
Ic= 100
μA ，
I
E
=0
I
C
= 0.1 mA , I
B
=0
I
E
= 100
μA，
I
C
=0
V
CB
= 40 V , I
E
=0
V
CE
= 20 V , I
B
=0
V
EB
= 5
V , I
C
=0
85
MIN
40
25
5
0.1
0.1
0.1
300
TYP
MAX
UNIT
V
V
V
μA
μA
μA
V
CE
= 1 V , I
C
= 100 mA
Transition frequency
f
T
f =30
MHz
190
MHz
CLASSIFICATION OF HFE(1)
Rank
Range
B
85-160
C
120-200
D
160-300
Copyright © Avic Electronics Corp.
1
Website:
http://www.avictek.com
AVICTEK [ Avic Technology ]
