@vic
AV8550
TO-92 Plastic-Encapsulate Transistors
AV8550 TRANSISTOR（ PNP
）
FEATURES
Power dissipation
P
CM
: 1 W（Tamb=25℃）
Collector current
I
CM
: -1.5 A
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
TO—92
1. EMITTER
2. BASE
3.COLLECTOR
1
2 3
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified
）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
H
FE
（
1
）
DC current gain
H
FE
（
2
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
V
CE
(sat)
V
BE
(sat)
V
BE
V
CE
=-1V , I
C
=-800 mA
I
C
=-800 m,I
B
=-80 mA
I
C
=-800mA,I
B
=-80 mA
I
E
= -1.5A
V
CE
=-10 V, I
C
=-50mA
40
-0.5
-1.2
-1.6
V
V
V
Test conditions
Ic= -100
μA ，
I
E
=0
I
C
= -0.1 mA , I
B
=0
I
E
= -100
μA，
I
C
=0
V
CB
= -40 V , I
E
=0
V
CE
= -20 V , I
E
=0
V
EB
= -5 V ,
I
C
=0
85
MIN
-40
-25
-6
-0.1
-0.1
-0.1
300
TYP
MAX
UNIT
V
V
V
μA
μA
ΜA
V
CE
= -1V , I
C
=-100 mA
Transition frequency
f
T
f =30
MHz
190
MHz
CLASSIFICATION OF HFE(1)
Rank
Range
B
85-160
C
120-200
D
160-300
Copyright © Avic Electronics Corp.
1
Website:
http://www.avictek.com
AVICTEK [ Avic Technology ]
