@vic
TO-126 Plastic-Encapsulate Transistors
AV882 TRANSISTOR（ NPN
）
FEATURES
Power dissipation
P
CM
: 1.25 W（Tamb=25℃）
Collector current
I
CM
: 3 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
AV882
TO-126
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified
）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
H
FE
（
1
）
DC current gain
H
FE
（
2
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
V
CE
= 2 V, I
C
= 100mA
I
C
= 2A, I
B
= 0.2 A
I
C
= 2A, I
B
= 0.2 A
V
CE
= 5V , Ic=0.1A
f =10MHz
50
32
0.5
2
V
V
MHz
Test conditions
Ic= 100
μ
A， I
E
=0
Ic= 10 mA， I
B
=0
I
E
= 100
μ
A， I
C
=0
V
CB
= 40 V， I
E
=0
V
CE
= 30 V， I
B
=0
V
EB
= 6
V， I
C
=0
60
MIN
40
30
6
1
1
1
400
MAX
UNIT
V
V
V
µA
µA
µA
V
CE
= 2 V, I
C
= 1A
CLASSIFICATION OF HFE(1)
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
Copyright © Avic Electronics Corp.
1
Website:
http://www.avictek.com
AVICTEK [ Avic Technology ]
