@vic
SOT-23 Plastic-Encapsulate Transistors
SOT-23
AV9012LT1
FEATURES
Power dissipation
P
CM:
TRANSISTOR (PNP)
1. BASE
2. EMITTER
3. COLLECTOR
1. 0
0.3
W (Tamb=25℃)
0. 95
2. 4
1. 3
0. 95
Collector current
I
CM:
-0.5
A
Collector-base voltage
V
(BR)CBO
:
-40
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
V
CE
=-1V, I
C
=-500mA
I
C
=-500 mA, I
B
= -50mA
I
C
=-500 mA, I
B
= -50mA
V
CE
=-6V, I
C
= -20mA
2. 9
1. 9
Unit: mm
unless otherwise specified)
Test
conditions
MIN
-40
-25
-5
-0.1
-0.1
-0.1
120
40
-0.6
-1.2
150
V
V
MHz
400
TYP
MAX
UNIT
V
V
V
Ic= -100
µ
A, I
E
=0
Ic= -1mA, I
B
=0
I
E
=-100
µ
A, I
C
=0
V
CB
=-40 V, I
E
=0
V
CE
=-20V, I
B
=0
V
EB
= -5V, I
C
=0
V
CE
=-1V, I
C
= -50mA
0. 4
µ
A
µ
A
µ
A
f
T
f=
30MHz
H
200-350
CLASSIFICATION OF h
FE(1)
Rank
Range
L
120-200
J
300-400
DEVICE MARKING
S9012LT1=2T1
Copyright @vic Electronics Corp.
Website http://www.avictek.com
AVICTEK [ Avic Technology ]
