@vic
SOT-23 Plastic-Encapsulate Transistors
AV9015LT1
FEATURES
Power dissipation
P
CM:
0.2
W (Tamb=25℃)
TRANSISTOR (PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
T
J
, T
stg
: -55℃ to +150℃
0. 95
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE
(sat)
V
BE
(sat)
unless otherwise specified)
Test
conditions
MIN
-50
-45
-5
-0.1
-0.1
200
1000
-0.3
-1
V
V
TYP
MAX
UNIT
V
V
V
Ic= -100
µ
A, I
E
=0
Ic= -0.1mA, I
B
=0
I
E
=-100
µ
A, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
=-5V, I
C
= -1mA
I
C
=-100mA, I
B
= -10mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-5V, I
C
= -10mA
0. 4
Collector current
I
CM:
-0.1
A
Collector-base voltage
-50
V
V
(BR)CBO
:
Operating and storage junction temperature range
1. 0
2. 4
1. 3
2. 9
1. 9
0. 95
µ
A
µ
A
Transition frequency
f
T
f=
30MHz
150
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
L
200-450
H
450-1000
DEVICE MARKING
S9015LT1=M6
Copyright @vic Electronics Corp.
Website http://www.avictek.com
AVICTEK [ Avic Technology ]
