@vic
TO-92 Plastic-Encapsulate Transistors
AV965
AV965
FEATURES
TRANSISTOR（ NPN
）
TO—92
1.EMITTER
Power dissipation
P
CM
: 0.75
W（Tamb=25℃）
Collector current
I
CM
:
5
A
Collector-base voltage
V
(BR)CBO
: 42
V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
H
FE
（
1
）
DC current gain
H
FE
（
2
）
H
FE
（
3
）
Collector-emitter saturation voltage
V
CE
(sat)
2. COLLECTOR
3. BASE
1 2 3
unless
Test
otherwise
MIN
42
22
6
specified）
TYP
MAX
UNIT
V
V
V
0.1
0.1
conditions
Ic=1
�½�
A， I
E
=0
Ic= 1
I
E
= 10
mA， I
B
=0
μ
A， I
C
=0
V
CB
= 30 V , I
E
=0
V
EB
= 6 V， I
C
=0
V
CE
= 2 V,
mA
V
CE
= 2V,
V
CE
= 2V,
mA
I
C
= 0.15
150
340
150
μ
A
μ
A
I
C
= 500 mA
I
C
= 2000
950
I
C
=3000mA,I
B
=100 mA
0.35
V
CLASSIFICATION OF H
FE(2)
Rank
Range
R
340-600
T
560-950
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1
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AVICTEK [ Avic Technology ]
