@vic
MMBT2222ALT1
SOT-23 Plastic-Encapsulate Transistors
MMBT2222ALT1
FEATURES
TRANSISTOR (NPN)
SOT-23
1. BASE
Power dissipation
P
CM:
0.3
W (Tamb=25℃)
2. EMITTER
3. COLLECTOR
T
J
, T
stg
: -55℃ to +150℃
0. 95
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
H
FE(1)
DC current gain
H
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
unless otherwise specified)
Test
conditions
MIN
75
40
6
0.1
0.1
0.1
100
50
0.6
1.2
V
V
300
TYP
MAX
UNIT
V
V
V
Ic= 10
µ
A, I
E
=0
Ic= 10mA, I
B
=0
I
E
=10
µ
A, I
C
=0
V
CB
=70V, I
E
=0
V
CE
=35V, I
B
=0
V
EB
= 3V, I
C
=0
V
CE
=10V, I
C
= 150mA
V
CE
=10V, I
C
= 1mA
I
C
=500mA, I
B
= 50mA
I
C
=500mA, I
B
= 50mA
V
CE
=20V, I
C
= 20mA
f=
100MHz
0. 4
Collector current
0.6
A
I
CM:
Collector-base voltage
75
V
V
(BR)CBO
:
Operating and storage junction temperature range
1. 0
2. 4
1. 3
2. 9
1. 9
0. 95
µ
A
µ
A
µ
A
Transition frequency
f
T
300
MHz
DEVICE MARKING:
MMBT2222A = 1P
Copyright @vic Electronics Corp.
Website http://www.avictek.com
AVICTEK [ Avic Technology ]
