@vic
SOT-23 Plastic-Encapsulate Transistors
SOT-23
MMBT4403LT1
TRANSISTOR (PNP)
1. BASE
2. EMITTER
T
J
, T
stg
: -55℃ to +150℃
0. 95
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
unless otherwise specified)
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Ic=-100µA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-35V, I
E
=0
V
CE
=-35V, I
B
=0
V
EB
=-4V, I
C
=0
V
CE
=-2V, I
C
= -150mA
I
C
=-150mA, I
B
=-15mA
I
C
=- 150mA, I
B
=-15mA
V
CE
= -10V, I
C
= -20mA
-40
-40
-5
-0.1
-0.1
-0.1
100
300
-0.4
-0.95
200
0. 4
FEATURES
Power dissipation
0.3
W (Tamb=25℃)
P
CM:
Collector current
-0.6
A
I
CM:
Collector-base voltage
-40
V
V
(BR)CBO
:
Operating and storage junction temperature range
3. COLLECTOR
1. 0
2. 4
1. 3
2. 9
1. 9
0. 95
V
V
V
µA
µA
µA
V
V
MHz
f
T
f =
100MHz
DEVICE MARKING
MMBT4403LT1=2T
AVICTEK [ Avic Technology ]
