@vic
SOT-23 Plastic-Encapsulate Transistors
MMBT5401LT1
FEATURES
Power dissipation
P
CM:
TRANSISTOR (PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
0.3
W (Tamb=25℃)
0. 95
1. 0
-
2. 4
1. 3
Collector current
I
CM:
-0.6
A
Collector-base voltage
-160
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
2. 9
1. 9
0. 95
Unit: mm
unless otherwise specified)
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
H
FE(1)
Ic= -100
µ
A, I
E
=0
Ic= -1 mA, I
B
=0
I
E
= -10
µ
A, I
C
=0
V
CB
=-120V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
=-10mA
V
CE
= -5V, I
C
=-50mA
I
C
=-50mA, I
B
= -5mA
I
C
= -50mA, I
B
= -5mA
V
CE
= -5V, I
C
= -10mA
-160
-150
-5
-0.1
-0.1
80
100
50
-0.5
-1
200
0. 4
V
V
V
µ
A
µ
A
DC current gain
H
FE(2)
H
FE(3)
Collector-emitter saturation voltage
Base-emitter
voltage
Transition frequency
saturation
V
CE
(sat)
V
BE
(sat)
V
V
f
T
f=
30MHz
100
MHz
DEVICE MARKING
MMBT5401LT1=2L